Polarization retention of thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene film capacitors

Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of +/- 20 V and 1 ms, respectively, over 200 h at 80 degrees C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memory.