Polarization retention of thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene film capacitors

被引：17

作者：

Park, Youn Jung ^{[1
]}

Chang, Jiyoun ^{[1
]}

Kang, Seok Ju ^{[1
]}

Park, Cheolmin ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 10期

关键词：

dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; ferroelectric thin films; polymers; thin film capacitors;

D O I：

10.1063/1.3216053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of +/- 20 V and 1 ms, respectively, over 200 h at 80 degrees C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memory.

引用

页数：3

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