Diffusion and Interaction of In and As Implanted into SiO2 Films

被引：3

作者：

Tyschenko, I. E. ^{[1
]}

Voelskow, M. ^{[2
]}

Mikhaylov, A. N. ^{[3
]}

Tetelbaum, D. I. ^{[3
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Helmholtz Ctr Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[3] Natl Res Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 08期

关键词：

In; As; silicon oxide; ion implantation; diffusion; ION-BEAM SYNTHESIS; GAAS NANOCRYSTALS; SIO2; SILICON; LAYERS;

D O I：

10.1134/S1063782619080190

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800-1100 degrees C. It is found that annealing at T = 800-900 degrees C results in the segregation of As atoms at a depth corresponding to the As+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100 degrees C yields the segregation of In atoms at the surface of SiO2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D-As = 3.2 x 10(-14) cm(2) s(-1).

引用

页码：1004 / 1010

页数：7

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