Blue light emission from C~+ implanted SiO2 films

被引：0
|
作者：
ZHAO Jun
机构：
来源：
Chinese Science Bulletin | 1997年 / 19期
关键词：
SiO; Blue light emission from C; implanted SiO2 films;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectronics devices directly. Moreover, it is also an ideal object in
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页码：1670 / 1671
页数：2
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