Investigation of thermal effects on the single-finger heterojunction bipolar transistors

被引：0
|
作者：
Yarn, K. F. [1 ]
Wang, Y. H.
Houng, M. P.
Lew, B. K.
机构：
[1] Far E Coll, Dept Elect Engn, Tainan 744, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 2006年 / 93卷 / 08期
关键词：
heterojunction bipolar transistor (HBT); thermal conductivity; cut-off frequency; maximum frequency;
D O I：
10.1080/00207210612331393025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed.
引用
收藏
页码：521 / 532
页数：12
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