THERMAL COUPLING IN 2-FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:40
|
作者
LIU, W
机构
[1] Corporate R&D, Texas Instruments, Dallas
关键词
D O I
10.1109/16.387234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have previously analyzed the collapse phenomenon in heterojunction bipolar transistors (HBT's) when the mutual couplings among the transistor fingers are negligible. In this investigation, we derive the collapse loci equations in 2-finger HBT's in the presence of thermal coupling, It is found that the collapse loci equations are closely linked to a thermal instability condition best determined from the transistor regression characteristics, Unlike the previous derivation assuming zero thermal coupling, the collapse loci equations derived here are different depending on whether the HBT Is driven by constant base current or constant base voltage bias.
引用
收藏
页码:1033 / 1038
页数:6
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