共 50 条
- [3] RECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1992, 35 (11) : 1633 - 1637
- [5] SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. 1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 1 - 4
- [6] THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 165 - 170
- [7] THERMAL RUNAWAY TOLERANCE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 886 - 888
- [8] GEOMETRY CONSIDERATIONS FOR THERMAL DESIGN OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6501 - 6507
- [9] GRUNN EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1994, 30 (14) : 1183 - 1184
- [10] COMPARISON OF 2 PASSIVATION PROCESSES FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 473 - 478