Thermal impedances of multi-finger heterojunction bipolar transistors

被引：6
|
作者：
Anholt, R [1 ]
机构：
[1] Gateway Modeling Inc, Minneapolis, MN 55414 USA
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(98)00094-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Computed thermal impedances of thermally-shunted HBTs with 2 to 4 fingers are compared with measurements, and several different HBT thermal designs are explored. To minimize self heating by adjacent elements, either the thermal shunt must be very thick or a flip-chip sink should be used. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：865 / 869
页数：5
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