Structural and optical characterization of GaSb layers on Si (001) substrates

被引：7
|
作者：
Toda, T. [1 ]
Jinbo, Y. [1 ]
Uchitomi, N. [1 ]
机构：
[1] Nagaoka Univ Technol, Dept Elect Engn, Kamitomioka 1603-1, Nagaoka, Niigata, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期
关键词：
D O I：
10.1002/pssc.200669553
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the growth of GaSb layers on Si (001) substrates by molecular beam epitaxy (MBE). Epilayers were grown as a function of Sb-4/Ga beam equivalent pressure ratio (BEPR). They were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), micro Raman scattering analysis. We confirmed that the optimum condition to grow relative high quality GaSb layer in this study was Sb-4/Ga=20. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2693 / +
页数：2
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