Structural and optical characterization of GaSb layers on Si (001) substrates

被引：7
|
作者：
Toda, T. [1 ]
Jinbo, Y. [1 ]
Uchitomi, N. [1 ]
机构：
[1] Nagaoka Univ Technol, Dept Elect Engn, Kamitomioka 1603-1, Nagaoka, Niigata, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期
关键词：
D O I：
10.1002/pssc.200669553
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the growth of GaSb layers on Si (001) substrates by molecular beam epitaxy (MBE). Epilayers were grown as a function of Sb-4/Ga beam equivalent pressure ratio (BEPR). They were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), micro Raman scattering analysis. We confirmed that the optimum condition to grow relative high quality GaSb layer in this study was Sb-4/Ga=20. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2693 / +
页数：2
相关论文
共 50 条
  • [31] MBE growth and characterization of GaAs1-xSbx epitaxial layers on Si (001) substrates
    Toda, T
    Nishino, F
    Kato, A
    Kambayashi, T
    Jinbo, Y
    Uchitomi, N
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 602 - 605
  • [32] Formation of β-FeSi2 layers on Si(001) substrates
    Tanaka, Masaya
    Kumagai, Yoshinao
    Suemasu, Takashi
    Hasegawa, Fumio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (6 A): : 3620 - 3624
  • [33] Chemical vapor deposition of carbon layers on Si {001} substrates
    Milenov, T. I.
    Rafailov, P. M.
    Avdeev, G. V.
    Thomsen, C.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (09): : 1273 - 1276
  • [34] Formation of β-FeSi2 layers on Si(001) substrates
    Tanaka, M
    Kumagai, Y
    Suemasu, T
    Hasegawa, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (6A): : 3620 - 3624
  • [35] Growth and structural characterization of GaInAsSb films on GaSb substrates
    Amariei, A.
    Polychroniadis, E. K.
    Dimroth, F.
    Bett, A. W.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1229 - E1234
  • [36] Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates
    Tanaka, Atsunori
    Choi, Woojin
    Chen, Renjie
    Liu, Ren
    Mook, William M.
    Jungjohann, Katherine L.
    Yu, Paul K. L.
    Dayeh, Shadi A.
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (08)
  • [37] STRUCTURAL CHARACTERIZATION OF PREFERENTIALLY ORIENTED CUBIC BN FILMS GROWN ON SI (001) SUBSTRATES
    BALLAL, AK
    SALAMANCARIBA, L
    TAYLOR, CA
    DOLL, GL
    THIN SOLID FILMS, 1993, 224 (01) : 46 - 51
  • [38] The effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy
    Obata, T
    Komeda, K
    Nakao, T
    Ueba, H
    Tatsuyama, C
    APPLIED SURFACE SCIENCE, 1997, 117 : 507 - 511
  • [39] Effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy
    Obata, T.
    Komeda, K.
    Nakao, T.
    Ueba, H.
    Tatsuyama, C.
    Applied Surface Science, 1997, 117-118 : 507 - 511
  • [40] Monte Carlo simulation of CdTe layers growth on CdTe(001) and Si(001) substrates
    Pyziak, L
    Stefaniuk, I
    Virt, I
    Kuzma, M
    APPLIED SURFACE SCIENCE, 2004, 226 (1-3) : 114 - 119
12345