Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS

被引：0

作者：

Lin, Chun-Yu ^{[1
]}

Fan, Mei-Lian ^{[2
]}

Ker, Ming-Dou ^{[2
]}

Chu, Li-Wei ^{[3
]}

Tseng, Jen-Chou ^{[3
]}

Song, Ming-Hsiang ^{[3
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei, Taiwan

[2] Natl Chiao Tung Univ, Inst Electron, Hsinchu, Taiwan

[3] Taiwan Semiconductor Manufactur Co, Hsinchu, Taiwan

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

Diode; electrostatic discharge (ESD); radio-frequency (RF); silicon-controlled rectifier (SCR); AMPLIFIER; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

引用

页数：4

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