Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS

被引：0
|
作者：
Lin, Chun-Yu [1 ]
Fan, Mei-Lian [2 ]
Ker, Ming-Dou [2 ]
Chu, Li-Wei [3 ]
Tseng, Jen-Chou [3 ]
Song, Ming-Hsiang [3 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei, Taiwan
[2] Natl Chiao Tung Univ, Inst Electron, Hsinchu, Taiwan
[3] Taiwan Semiconductor Manufactur Co, Hsinchu, Taiwan
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
Diode; electrostatic discharge (ESD); radio-frequency (RF); silicon-controlled rectifier (SCR); AMPLIFIER; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.
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页数：4
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