High transconductance heterostructure field-effect transistors based on AlGaN/GaN

被引：103
|
作者：
Chen, Q
Khan, MA
Yang, JW
Sun, CJ
Shur, MS
Park, H
机构：
[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903
[2] DONGGUK UNIV,DEPT ELECTR ENGN,SEOUL 100715,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期
关键词：
D O I：
10.1063/1.117894
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 mu m. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum de transconductance. (C) 1996 American Institute of Physics.
引用
收藏
页码：794 / 796
页数：3
相关论文
共 50 条
  • [21] Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
    Yu, ET
    Sullivan, GJ
    Asbeck, PM
    Wang, CD
    Qiao, D
    Lau, SS
    APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2794 - 2796
  • [22] AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure
    Fang, Yulong
    Feng, Zhihong
    Yin, Jiayun
    Zhou, Xingye
    Wang, Yuangang
    Gu, Guodong
    Song, Xubo
    Lv, Yuanjie
    Li, Chengming
    Cai, Shujun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (12) : 4084 - 4089
  • [23] AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
    Witte, W.
    Reuters, B.
    Fahle, D.
    Behmenburg, H.
    Wang, K. R.
    Trampert, A.
    Hollaender, B.
    Hahn, H.
    Kalisch, H.
    Heuken, M.
    Vescan, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (08)
  • [24] Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors
    Yang, Ming
    Lv, Yuanjie
    Cui, Peng
    Liu, Yan
    Fu, Chen
    Lin, Zhaojun
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 123 : 223 - 227
  • [25] AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
    Oshimura, Yoshinori
    Sugiyama, Takayuki
    Takeda, Kenichiro
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Akasaki, Isamu
    Amano, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
  • [26] AlGaN/GaN heterostructure field-effect transistors with back-doping design for high-power applications: High current density with high transconductance characteristics
    Maeda, N
    Tsubaki, K
    Saitoh, T
    Tawara, T
    Kobayashi, N
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 537 - 542
  • [27] Electron Transport Mechanism for Ohmic Contact to GaN/AlGaN/GaN Heterostructure Field-Effect Transistors
    Ando, Yuji
    Ishikura, Kohji
    Murase, Yasuhiro
    Asano, Kazunori
    Takenaka, Isao
    Takahashi, Shinnosuke
    Takahashi, Hidemasa
    Sasaoka, Chiaki
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (09) : 2788 - 2794
  • [28] Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
    R.M. Chu
    Y.D. Zheng
    Y.G. Zhou
    S.L. Gu
    B. Shen
    R. Zhang
    R.L. Jiang
    P. Han
    Y. Shi
    Applied Physics A, 2003, 77 : 669 - 671
  • [29] Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
    Pavlov, A. Yu.
    Tomosh, K. N.
    Pavlov, V. Yu.
    Slapovskiy, D. N.
    Klekovkin, A. V.
    Ivchenko, I. A.
    NANOBIOTECHNOLOGY REPORTS, 2022, 17 (SUPPL 1) : S45 - S49
  • [30] Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
    A. Yu. Pavlov
    K. N. Tomosh
    V. Yu. Pavlov
    D. N. Slapovskiy
    A. V. Klekovkin
    I. A. Ivchenko
    Nanobiotechnology Reports, 2022, 17 : S45 - S49
12345