Zone-melting Czochralski pulling growth of Bi12SiO20 single crystals

被引：9

作者：

Lan, CW ^{[1
]}

Chen, HJ ^{[1
]}

Tsai, CB ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 245卷 / 1-2期

关键词：

diameter control; stability; zone-melting Czochralski method;

D O I：

10.1016/S0022-0248(02)01688-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this report the zone-melting Czochralski (ZMCz) growth of Bi12SiO20 (BSO) single crystals is presented and its growth stability is discussed. With a careful starting up of the melt level, the growth was found always self-stabilized leading to an excellent diameter control. Due to the zone-leveling nature, the grown crystals showed good optical uniformity. Nevertheless, it was found that bubble inclusion was a serious problem. By using an inner crucible, bubble-free crystals could be easily grown. This double-crucible ZMCz technique was found to be useful and could be used for other oxides as well. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：56 / 62

页数：7

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