Zone-melting Czochralski pulling growth of Bi12SiO20 single crystals

被引：9
|
作者：
Lan, CW [1 ]
Chen, HJ [1 ]
Tsai, CB [1 ]
机构：
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 245卷 / 1-2期
关键词：
diameter control; stability; zone-melting Czochralski method;
D O I：
10.1016/S0022-0248(02)01688-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this report the zone-melting Czochralski (ZMCz) growth of Bi12SiO20 (BSO) single crystals is presented and its growth stability is discussed. With a careful starting up of the melt level, the growth was found always self-stabilized leading to an excellent diameter control. Due to the zone-leveling nature, the grown crystals showed good optical uniformity. Nevertheless, it was found that bubble inclusion was a serious problem. By using an inner crucible, bubble-free crystals could be easily grown. This double-crucible ZMCz technique was found to be useful and could be used for other oxides as well. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：56 / 62
页数：7
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