Low-temperature fabrication and characterization of Ge-on-insulator structures

被引：20

作者：

Yu, C-Y. ^{[1
]}

Lee, C-Y.

Lin, C-H.

Liu, C. W.

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期

关键词：

Diffusion - Hydrogen - Ion implantation - Passivation - Photocurrents - Surface roughness - Tunnel diodes;

D O I：

10.1063/1.2347116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge-on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. Ultralow bonding temperatures of 150-300 degrees C are employed in order to suppress hydrogen outdiffusion and to produce a low defect density, in an attempt to produce high photocurrent and photoresponse. Thus reducing the hydrogen outdiffusion results in decreased surface roughness. A low defect density is suggested by a low inversion-current leakage of the tunnel diodes. The photoresponse of the Ge-on-insulator detector is also found to increase with decreasing bonding temperature, indicating that defects caused by hydrogen implantation are passivated more effectively. (c) 2006 American Institute of Physics.

引用

页数：3

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