Low-temperature fabrication and characterization of Ge-on-insulator structures

被引：20
|
作者：
Yu, C-Y. [1 ]
Lee, C-Y.
Lin, C-H.
Liu, C. W.
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[3] Natl Nano Device Labs, Hsinchu, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期
关键词：
Diffusion - Hydrogen - Ion implantation - Passivation - Photocurrents - Surface roughness - Tunnel diodes;
D O I：
10.1063/1.2347116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ge-on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. Ultralow bonding temperatures of 150-300 degrees C are employed in order to suppress hydrogen outdiffusion and to produce a low defect density, in an attempt to produce high photocurrent and photoresponse. Thus reducing the hydrogen outdiffusion results in decreased surface roughness. A low defect density is suggested by a low inversion-current leakage of the tunnel diodes. The photoresponse of the Ge-on-insulator detector is also found to increase with decreasing bonding temperature, indicating that defects caused by hydrogen implantation are passivated more effectively. (c) 2006 American Institute of Physics.
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页数：3
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