Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

被引：8

作者：

Wen, Juanjuan ^{[1
]}

Liu, Zhi ^{[1
]}

Li, Leliang ^{[1
]}

Li, Chong ^{[1
]}

Xue, Chunlai ^{[1
]}

Zuo, Yuhua ^{[1
]}

Li, Chuanbo ^{[1
]}

Wang, Qiming ^{[1
]}

Cheng, Buwen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 14期

基金：

中国国家自然科学基金;

关键词：

LIQUID-PHASE EPITAXY; GERMANIUM; GAP; SI; ALLOYS; HETEROSTRUCTURES; SOURCE/DRAIN; SUBSTRATE; MOBILITY;

D O I：

10.1063/1.4801805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature photoluminescence (PL) was observed along 50 mu m long Ge strips on insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap of Ge. Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily because of the decrease in the energy difference between the direct and indirect gaps of Ge. The change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips. Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk Ge, which indicates the high quality of Ge-on-insulator structures. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801805]

引用

页数：4

共 50 条

[1] Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth
Wen, J. J.
Liu, Z.
Zhou, T. W.
Xue, C. L.
Zuo, Y. H.
Li, C. B.
Wang, Q. M.
Cheng, B. W.
THIN SOLID FILMS, 2015, 586 : 54 - 57
[2] Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth
Wen, J. J.
Zhang, D. L.
Liu, Z.
Zhou, T. W.
Xue, C. L.
Zuo, Y. H.
Li, C. B.
Wang, Q. M.
Cheng, B. W.
ECS SOLID STATE LETTERS, 2014, 3 (07) : Q33 - Q35
[3] Resonant Photoluminescence from Ge Microdisks on Ge-On-Insulator
Xu, Xuejun
Nishida, Keisuke
Sawano, Kentarou
Maruizumi, Takuya
Shiraki, Yasuhiro
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 135 - 136
[4] MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth
Liu, YC
Gopalakrishnan, K
Griffin, PB
Ma, K
Deal, MD
Plummer, JD
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 1001 - 1004
[5] Low-temperature fabrication and characterization of Ge-on-insulator structures
Yu, C-Y.
Lee, C-Y.
Lin, C-H.
Liu, C. W.
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[6] Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in Homoepitaxial growth
Department of Electrical and Electronic Engineering, Russia
不详
Res Rep Inf Sci Electr Eng Kyushu Univ, 2013, 2 (63-67):
[7] In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth
Chikita, H.
Matsumura, R.
Tojo, Y.
Yokoyama, H.
Sadoh, T.
Miyao, M.
THIN SOLID FILMS, 2014, 557 : 139 - 142
[8] Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth
Liu, Zhi
Wen, Juanjuan
Zheng, Jun
Xue, Chunlai
Zuo, Yuhua
Li, Chuanbo
Cheng, Buwen
Wang, Qiming
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (12) : P415 - P418
[9] Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature
Han, Xueyang
Chen, Chia-Tsong
Lim, Cheol-Min
Toprasertpong, Kasidit
Takenaka, Mitsuru
Takagi, Shinichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SC)
[10] MBE GROWTH OF InP-HBT STRUCTURES ON Ge-ON-INSULATOR/Si SUBSTRATES BY MBE
Lubyshev, D.
Fastenau, J. M.
Wu, Y.
Liu, W. K.
Bulsara, M. T.
Fitzgerald, E. A.
Urteaga, M.
W.Ha
J.Bergman
B.Brar
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 411 - +

← 1 2 3 4 5 →