First-principles study of Mg incorporation at wurtzite InN (0001) and (0 0 0 (1)over-bar) surfaces
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作者:
Ding, S. F.
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Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R ChinaFudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
Ding, S. F.
[1
,2
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Qu, X. P.
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Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
Qu, X. P.
[1
]
Fan, G. H.
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S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R ChinaFudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
Fan, G. H.
[2
]
机构:
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
in this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0001) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 114 ML coverage of the InN(0001) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2 x 2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions. (C) 2008 Elsevier B.V. All rights reserved.
机构:
China Univ Min & Technol, Coll Sci, Xuzhou 221116, Peoples R ChinaNanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
Wang, Jianli
Bai, Dongmei
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China Univ Min & Technol, Coll Sci, Xuzhou 221116, Peoples R ChinaNanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
Bai, Dongmei
Tang, Gang
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China Univ Min & Technol, Coll Sci, Xuzhou 221116, Peoples R ChinaNanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
Tang, Gang
Wu, X. S.
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Nanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
Wu, X. S.
Gu, Mingqiang
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Nanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Dept Phys, Lab Solid State Microstruct, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
机构:
Tokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, Koganei, Tokyo 1848588, JapanTokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, Koganei, Tokyo 1848588, Japan
Kumagai, Yoshinao
Koukitu, Akinori
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Tokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, Koganei, Tokyo 1848588, JapanTokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, Koganei, Tokyo 1848588, Japan
机构:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Institute of Applied Physics, College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, ChinaDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Li, D.F.
Liu, K.Z.
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National Key Laboratory for Surface Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621907, ChinaDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Liu, K.Z.
Xiao, H.Y.
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Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Xiao, H.Y.
Dong, H.N.
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Institute of Applied Physics, College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, ChinaDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Dong, H.N.
Zu, X.T.
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Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaDepartment of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
Zu, X.T.
Journal of Alloys and Compounds,
2007,
440
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: 229
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