First-principles study of Mg incorporation at wurtzite InN (0001) and (0 0 0 (1)over-bar) surfaces

被引：1
|
作者：
Ding, S. F. [1 ,2 ]
Qu, X. P. [1 ]
Fan, G. H. [2 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 8-11期
基金：
中国国家自然科学基金;
关键词：
InN; Density functional theory; Mg incorporation; Surface; ELECTRON-TRANSPORT; THERMAL-STABILITY; INDIUM NITRIDE; GROWTH; GAN;
D O I：
10.1016/j.physb.2008.12.008
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
in this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0001) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 114 ML coverage of the InN(0001) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2 x 2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1279 / 1282
页数：4
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