InxGa1-xSb n-channel MOSFET: effect of interface states on CV characteristics

被引：2

作者：

Islam, Muhammad Shaffatul ^{[1
]}

Alam, Md. Nur Kutubul ^{[1
]}

Islam, Md. Rafiqul ^{[1
]}

机构：

[1] Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2014年 / 11卷 / 1-4期

关键词：

III-V MOSFET; CV characteristics; interface states; eigen energy; BIAS TEMPERATURE INSTABILITY;

D O I：

10.1504/IJNT.2014.059812

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The capacitance-voltage (CV) characteristics of InGaSb based n-MOSFET are investigated by quantum mechanical calculation solving 1D self-consistent Schrodinger-Poisson equation using Silvaco's ATLAS device simulation package. The charge density profile is determined with and without wave function penetration within the oxide layer and Neuman boundary condition. Quasi-static CV characteristics are studied both for the positive and negative interface charge densities. The results obtained from the simulation demonstrate that the significant shift in threshold voltage entirely depends on the polarity of the interface charge density. The oxide-dependent gate capacitance is also explained by simulating first eigen energy with and without wave function penetration.

引用

页码：85 / 96

页数：12

共 50 条

[31] InxGa1-xAs Surface Channel, Quantum Well MOSFET: Electrostatic Analysis by Self Consistent CV Characterization Incorporating Strain Effects
Shadman, Abir
Rahman, Ehsanur
Datta, Kanak
Biswas, Sudipta Romen
Khosru, Quazi Deen Mohd
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 539 - 542
[32] ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENT
KROWNE, CM
HOLMKENN.JW
SURFACE SCIENCE, 1974, 46 (01) : 197 - 231
[33] Analysis of process parameter effect on DIBL in n-channel MOSFET device using L27 Orthogonal Array
Salehuddin, F.
Kaharudin, K. E.
Zain, A. S. M.
Yamin, A. K. Mat
Ahmad, I.
3RD INTERNATIONAL CONFERENCE ON FUNDAMENTAL AND APPLIED SCIENCES (ICFAS 2014): INNOVATIVE RESEARCH IN APPLIED SCIENCES FOR A SUSTAINABLE FUTURE, 2014, 1621 : 322 - 328
[34] Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors
Su, Hao
Wang, Hong
Xu, Tao
Zeng, Rong
APPLIED PHYSICS LETTERS, 2009, 95 (12)
[35] Transport properties of n-channel Si/SiGe modulation-doped systems with varied channel thickness: Effect of the interface roughness
Yutani, A
Shiraki, Y
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (07) : 1009 - 1014
[36] MEASUREMENTS AND MODELING OF THE N-CHANNEL MOSFET INVERSION LAYER MOBILITY AND DEVICE CHARACTERISTICS IN THE TEMPERATURE-RANGE 60-300 K
HUANG, CL
GILDENBLAT, GS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) : 1289 - 1300
[37] EFFECT OF P-I-P+ BUFFER ON CHARACTERISTICS OF N-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
KANAMORI, M
JENSEN, GU
SHUR, M
LEE, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) : 226 - 233
[38] N-CHANNEL LATERAL INSULATED GATE TRANSISTORS .1. STEADY-STATE CHARACTERISTICS
PATTANAYAK, DN
ROBINSON, AL
CHOW, TP
ADLER, MS
BALIGA, BJ
WILDI, EJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) : 1956 - 1963
[39] Effects of interface state density on 4H-SiC n-channel field-effect mobility
Yoshioka, Hironori
Senzaki, Junji
Shimozato, Atsushi
Tanaka, Yasunori
Okumura, Hajime
APPLIED PHYSICS LETTERS, 2014, 104 (08)
[40] Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs
Shinde, NS
Dhole, SD
Kanjilal, D
Bhoraskar, VN
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 156 (1-4): : 116 - 120

← 1 2 3 4 5 →