Agglomeration and Dendritic Growth of Cu/Ti/Si Thin Film

Agglomeration and the transformation from random fractal to dendritic growth have been observed during Cu/Ti/Si thin film annealing. The experimental results show that the annealing temperature, film thickness, and substrate thickness influenced the agglomeration and dendritic growth. Multifractal spectrum is used to characterize the surface morphology quantificationally. The shapes of the multifractal spectra are hook-like to the left. Value of Delta alpha increases with the annealing temperature rising, and Delta f increases from 500 degrees C to 700 degrees C but reduces from 700 degrees C to 800 degrees C. The dendritic patterns with symmetrical branches are generated in the surfaces when the thin films were annealed at 800 degrees C.