Operation of silicon-germanium CMOS on sapphire technology at cryogenic temperatures

被引：0

作者：

Mathew, SJ

Dubbelday, WB

Cressler, JD

Ott, J

Chu, JO

Meyerson, BS

Kavanagh, KL

Lagnado, I

机构：

来源：

PROCEEDINGS OF THE FOURTH SYMPOSIUM ON LOW TEMPERATURE ELECTRONICS AND HIGH TEMPERATURE SUPERCONDUCTIVITY | 1997年 / 97卷 / 02期

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D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

A SiGe CMOS on sapphire technology is fabricated, cooled to 77K, and compared with an identically constructed Si CMOS on sapphire technology. The results show that SiGe CMOS on sapphire has enhanced low-field mobility, lower mobility degradation at high gate voltages, and improved transconductance compared to Si on sapphire technology at cryogenic temperatures.

引用

页码：270 / 278

页数：9

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