Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures

被引：43

作者：

Jang, HW ^{[1
]}

Jeon, CM

Kim, KH

Kim, JK

Bae, SB

Lee, JH

Choi, JW

Lee, JL

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Kyungpook Natl Univ, Dept Elect & Elect Engn, Taegu 702701, South Korea

[3] Wayne State Univ, Dept Elect & Elect Engn, Detroit, MI 48202 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.1501162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mechanism on the formation of two-dimensional electron gas (2DEG) at the interface of undoped AlxGa1-xN with undoped GaN was interpreted through surface band bending observed using synchrotron radiation photoemission spectroscopy. The surface Fermi level was independent of AlxGa1-xN thickness and Al content in AlxGa1-xN, showing Fermi pinning to surface states at 1.6 eV below conduction band minimum. Oxygen donor impurities in undoped AlxGa1-xN, unintentionally doped during the growth, led to the formation of large density of 2DEG (>similar to10(13)/cm(3)) at the AlxGa1-xN/GaN interface via electron generation. (C) 2002 American Institute of Physics.

引用

页码：1249 / 1251

页数：3

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