Improved transport properties of InxGa1-xP/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures

被引：2
|
作者：
Zheng, HQ [1 ]
Yoon, SF [1 ]
Radhakrishnan, K [1 ]
Ng, GI [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 12期
关键词：
semiconductors; surfaces and interfaces; epitaxy; electronic transport; luminescence;
D O I：
10.1016/S0038-1098(99)00418-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A strained In0.40Ga0.60P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structure (PHEMT) was proposed to improve the electron transport properties. The structures were grown by the solid source molecular beam epitaxy (SSMBE) technique. With the incorporation of a strained In0.40Ga0.60P barrier layer and a GaAs smoothing layer, higher Hall mobility was achieved, indicating that better electron distribution was formed in the proposed structure. Photoluminescence (PL) measurements verified that the incorporation of a strained barrier and a smoothing layer into the PHEMT structure modifies the electron distribution so that most of the electrons are distributed in the In0.2Ga0.8As channel, resulting in high electron mobility. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：661 / 664
页数：4
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