Improved transport properties of InxGa1-xP/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures

被引：2
|
作者：
Zheng, HQ [1 ]
Yoon, SF [1 ]
Radhakrishnan, K [1 ]
Ng, GI [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 12期
关键词：
semiconductors; surfaces and interfaces; epitaxy; electronic transport; luminescence;
D O I：
10.1016/S0038-1098(99)00418-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A strained In0.40Ga0.60P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structure (PHEMT) was proposed to improve the electron transport properties. The structures were grown by the solid source molecular beam epitaxy (SSMBE) technique. With the incorporation of a strained In0.40Ga0.60P barrier layer and a GaAs smoothing layer, higher Hall mobility was achieved, indicating that better electron distribution was formed in the proposed structure. Photoluminescence (PL) measurements verified that the incorporation of a strained barrier and a smoothing layer into the PHEMT structure modifies the electron distribution so that most of the electrons are distributed in the In0.2Ga0.8As channel, resulting in high electron mobility. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：661 / 664
页数：4
相关论文
共 50 条
  • [11] AZO-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistors
    Lee, Ching-Sung
    Chou, Bo-Yi
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (03) : H58 - H60
  • [12] Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors on GaAs with InxGa1-xP graded buffer
    Yuan, K
    Radhakrishnan, K
    Zheng, HQ
    Ng, GI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2119 - 2122
  • [13] Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates
    Hoke, WE
    Lyman, PS
    Mosca, JJ
    Hendriks, HT
    Torabi, A
    Bonner, WA
    Lent, B
    Chou, LJ
    Hsieh, KC
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 968 - 973
  • [14] Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well
    Dunford, RB
    Popovic, D
    Pollak, FH
    Noble, TF
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3144 - 3147
  • [15] A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor
    Yoon, SF
    Kam, AHT
    Gay, BP
    Zheng, HQ
    SOLID-STATE ELECTRONICS, 2000, 44 (06) : 1035 - 1042
  • [16] Effect of Strain on the Band Offsets of III-V Quantum Wells: InXGa1-XP/GaAs, InXGa1-XAs/Al0.2Ga0.8As and InXGa1-XN/GaN
    Das, Tapas
    Panda, Siddhartha
    Bera, Partha Pratim
    Biswas, Dipankar
    2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC), 2012,
  • [17] Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells
    Li, G
    Babinski, A
    Chua, SJ
    Jagadish, C
    APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2322 - 2324
  • [18] MAGNITUDE AND POLARITY OF STRAIN-INDUCED FIELDS IN PSEUDOMORPHIC IN0.2GA0.8AS QUANTUM-WELL STRUCTURES ON (112) GAAS SUBSTRATES
    SUN, D
    HENDERSON, RH
    TOWE, E
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 478 - 481
  • [19] Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures
    Hsu, RT
    Lin, YS
    Su, JS
    Hsu, WC
    Wu, YH
    Kao, MJ
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 24 (02) : 175 - 180
  • [20] Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing
    Lour, WS
    Tsai, MK
    Chen, KC
    Wu, YW
    Tan, SW
    Yang, YJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (10) : 826 - 830
12345