Improved transport properties of InxGa1-xP/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures

被引：2
|
作者：
Zheng, HQ [1 ]
Yoon, SF [1 ]
Radhakrishnan, K [1 ]
Ng, GI [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 12期
关键词：
semiconductors; surfaces and interfaces; epitaxy; electronic transport; luminescence;
D O I：
10.1016/S0038-1098(99)00418-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A strained In0.40Ga0.60P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structure (PHEMT) was proposed to improve the electron transport properties. The structures were grown by the solid source molecular beam epitaxy (SSMBE) technique. With the incorporation of a strained In0.40Ga0.60P barrier layer and a GaAs smoothing layer, higher Hall mobility was achieved, indicating that better electron distribution was formed in the proposed structure. Photoluminescence (PL) measurements verified that the incorporation of a strained barrier and a smoothing layer into the PHEMT structure modifies the electron distribution so that most of the electrons are distributed in the In0.2Ga0.8As channel, resulting in high electron mobility. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：661 / 664
页数：4
相关论文
共 50 条
  • [1] Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
    Zheng, HQ
    Yoon, SF
    Gay, BP
    Mah, KW
    Radhakrishnan, K
    Ng, GI
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 110 - 114
  • [2] Fabrication of strained and double heterojunction InxGa1-xP/In0.2Ga0.8As high electron mobility transistors grown by solid-source molecular beam epitaxy
    Yoon, SF
    Gay, BP
    Zheng, HQ
    Kam, HT
    Degenhardt, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) : 1115 - 1117
  • [3] Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator
    Yoon, SF
    Kam, AHT
    Gay, BP
    Zheng, HQ
    Ng, GI
    MICROELECTRONICS JOURNAL, 1999, 30 (08) : 745 - 752
  • [4] HIGHLY ANISOTROPIC ELECTRON MOBILITIES OF GAAS IN0.2GA0.8AS AL0.3GA0.7AS INVERTED HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES
    SCHWEIZER, T
    KOHLER, K
    ROTHEMUND, W
    GANSER, P
    APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2736 - 2738
  • [5] Subband electron densities of Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
    Appl Phys Lett, 26 (3582):
  • [6] A study on photo reflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures
    Yu, JI
    Lee, SJ
    Bae, IH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 25 (01): : 131 - 134
  • [7] Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
    Babinski, Adam
    Siwiec-Matuszyk, J.
    Baranowski, J.M.
    Li, G.
    Jagadish, C.
    2000, American Institute of Physics Inc. (77)
  • [8] In0.5Ga0.5P/In0.2Ga0.8As dual gate pseudomorphic high electron mobility transistors
    Lour, WS
    Tsai, MK
    Chen, KC
    Wu, YW
    Tan, SW
    Yang, YJ
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXV), 2001, 2001 (20): : 76 - 80
  • [9] Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
    Babinski, A
    Siwiec-Matuszyk, J
    Baranowski, JM
    Li, G
    Jagadish, C
    APPLIED PHYSICS LETTERS, 2000, 77 (07) : 999 - 1001
  • [10] Subband electron densities of Si delta-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
    Li, G
    Babinski, A
    Jagadish, C
    APPLIED PHYSICS LETTERS, 1997, 70 (26) : 3582 - 3584
12345