Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth

被引：5
|
作者：
Skogen, E [1 ]
Raring, J
DenBaars, S
Coldren, L
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 16期
关键词：
D O I：
10.1049/el:20045232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel structure and method for fabricating regions of high and low modal gain on the same chip are reported, which enable diode lasers with maximum efficiency to be monolithically integrated with multiple-section semiconductor optical amplifiers having both high gain and high saturation power. This method uses quantum-well intermixing and an offset-quantum-well regrowth to achieve regions with high and low optical confinement. Fabry-Perot broad-area lasers were used to characterise the material in both regions.
引用
收藏
页码：993 / 994
页数：2
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