Observation of a distributed epitaxial oxide in thermally grown SiO2 on Si(001) - Reply

被引：6
|
作者：
Munkholm, A [1 ]
Brennan, S [1 ]
Comin, F [1 ]
Ortega, L [1 ]
机构：
[1] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 24期
关键词：
D O I：
10.1103/PhysRevLett.79.4933
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：4933 / 4933
页数：1
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