Optical Characterization of Ge-on-Si Grown by using RTCVD

被引：8
|
作者：
Kim, T. S. [1 ]
Kil, Y. -H. [2 ]
Hong, W. K. [2 ]
Yang, H. D. [2 ]
Kang, S. [3 ]
Jeong, T. S. [1 ]
Shim, K. H. [2 ]
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[3] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
来源：
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期
关键词：
CHEMICAL-VAPOR-DEPOSITION; SI1-XGEX/SI(001) QUANTUM-WELLS; EPITAXIAL-GROWTH; RAMAN-SPECTROSCOPY; BAND ALIGNMENT; SUBSTRATE; HETEROSTRUCTURES; SEGREGATION; SI(100); ALLOYS;
D O I：
10.1149/05009.0381ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 angstrom, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.
引用
收藏
页码：381 / 386
页数：6
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