Optical Characterization of Ge-on-Si Grown by using RTCVD

被引：8

作者：

Kim, T. S. ^{[1
]}

Kil, Y. -H. ^{[2
]}

Hong, W. K. ^{[2
]}

Yang, H. D. ^{[2
]}

Kang, S. ^{[3
]}

Jeong, T. S. ^{[1
]}

Shim, K. H. ^{[2
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SI1-XGEX/SI(001) QUANTUM-WELLS; EPITAXIAL-GROWTH; RAMAN-SPECTROSCOPY; BAND ALIGNMENT; SUBSTRATE; HETEROSTRUCTURES; SEGREGATION; SI(100); ALLOYS;

D O I：

10.1149/05009.0381ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 angstrom, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.

引用

页码：381 / 386

页数：6

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