Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

被引：1
|
作者：
Zhang, RK
Zhong, Y
Zhang, W
Xu, YQ
Du, Y
Huang, YQ
Ren, XM
Niu, ZC
Wu, RH
机构：
[1] Beijing Univ Post & Telecom, Beijing 100876, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2002年 / 34卷 / 05期
关键词：
GaInNAs quantum wells; resonant cavity enhanced photodetector; WDM networks;
D O I：
10.1002/mop.10454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.
引用
收藏
页码：333 / 336
页数：4
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