Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

被引：1
|
作者：
Zhang, RK
Zhong, Y
Zhang, W
Xu, YQ
Du, Y
Huang, YQ
Ren, XM
Niu, ZC
Wu, RH
机构：
[1] Beijing Univ Post & Telecom, Beijing 100876, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2002年 / 34卷 / 05期
关键词：
GaInNAs quantum wells; resonant cavity enhanced photodetector; WDM networks;
D O I：
10.1002/mop.10454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.
引用
收藏
页码：333 / 336
页数：4
相关论文
共 50 条
  • [21] High performance 1.3 μm GaInNAs quantum well lasers on GaAs
    Wang, S. M.
    Adolfsson, G.
    Zhao, H.
    Wei, Y. Q.
    Gustavsson, J. S.
    Sadeghi, M.
    Larsson, A.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909
  • [22] Carrier Dynamics and Gain Characteristics of 1.3 μm GaInNAs Quantum Well Lasers on GaAs Substrate
    Sun, X.
    Vogiatzis, N.
    Rorison, J. M.
    2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2011,
  • [23] Temperature dependence of the threshold current and the lasing wavelength in 1.3-μm GaInNAs/GaAs single quantum well laser diode
    Kitatani, T
    Kondow, M
    Nakahara, K
    Larson, MC
    Uomi, K
    OPTICAL REVIEW, 1998, 5 (02) : 69 - 71
  • [24] Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers
    Jin, JY
    Tian, DC
    Shi, J
    Li, TN
    INFRARED PHYSICS & TECHNOLOGY, 2004, 45 (03) : 209 - 215
  • [25] A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
    Fehse, R
    Tomic, S
    Adams, AR
    Sweeney, SJ
    O'Reilly, EP
    Andreev, A
    Riechert, H
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 801 - 810
  • [26] Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures
    Sun, HD
    Macaluso, R
    Dawson, MD
    Robert, F
    Bryce, AC
    Marsh, JH
    Riechert, H
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1550 - 1556
  • [27] Properties of a high to 1.3μm GaInNAs/GaAs quantum well laser diode
    Zhang, X.
    Gupta, J. A.
    Barrios, P. J.
    Pakulski, G.
    Wu, X.
    Delage, A.
    Hall, T. J.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS V, 2006, 6133
  • [28] Temperature characteristics of λ = 1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy
    Microsystem Research Center, P and I Lab., Tokyo Institute of Technology, Yokohama-shi 226-8503, Japan
    不详
    IEICE Transactions on Electronics, 2002, E85-C (1 SPEC.) : 71 - 78
  • [29] Temperature characteristics of λ=1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy
    Kageyama, T
    Miyamoto, T
    Makino, S
    Ikenaga, Y
    Koyama, F
    Iga, K
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (01): : 71 - 78
  • [30] A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K
    Kitatani, T
    Nakahara, K
    Kondow, M
    Uomi, K
    Tanaka, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2A): : L86 - L87
12345