Curie temperatures and exchange interactions in diluted group-IV magnetic semiconductors

被引：1
|
作者：
Kudrnovsky, J
Turek, I
Drchal, V
Bruno, P
机构：
[1] Inst Phys AS CR, CZ-18221 Prague, Czech Republic
[2] Inst Phys Mat AS CR, CZ-61662 Brno, Czech Republic
[3] Charles Univ, Dept Elect Struct, CZ-12116 Prague, Czech Republic
[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
magnetic semiconductors; Curie temperature; exchange interactions; first principles;
D O I：
10.1016/j.jmmm.2003.12.789
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effective exchange interactions between magnetic atoms in GeMnCr alloys are obtained from the first principles by mapping total energies associated with rotations of magnetic moments onto the effective classical Heisenberg Hamiltonian. The calculated Curie temperature increases with Mn concentration but decreases linearly with increasing Cr content in a good agreement with a recent experiment. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码：1995 / 1996
页数：2
相关论文
共 50 条
  • [41] Magnetization and exchange interactions in Zn1-xFexTe diluted magnetic semiconductors
    Testelin, C
    Prost, JB
    Menant, M
    Zielinski, M
    Mycielski, A
    SOLID STATE COMMUNICATIONS, 2000, 113 (12) : 695 - 698
  • [42] INDIRECT EXCHANGE INTERACTION IN DILUTED MAGNETIC SEMICONDUCTORS
    YU, SS
    LEE, VC
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (11) : 2961 - 2975
  • [43] On the kinetic exchange in AIIIBV diluted magnetic semiconductors
    Blinowski, J
    Kacman, P
    ACTA PHYSICA POLONICA A, 2001, 100 (03) : 343 - 349
  • [44] Curie temperatures of the concentrated and diluted Kondo-lattice model as a possible candidate to describe magnetic semiconductors and metals
    Stier, M.
    Nolting, W.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (09): : 2192 - 2202
  • [45] Can correlated substitution enhance the Curie temperature in diluted magnetic semiconductors?
    Bouzerar, G
    Ziman, T
    Kudrnovsky, J
    APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4941 - 4943
  • [46] RANGE PARAMETERS OF DEEP ION IMPLANTS IN GROUP-IV SEMICONDUCTORS
    SCHULE, V
    GUNZLER, R
    OBERSCHACHTSIEK, P
    WEISER, M
    KALBITZER, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (03): : 338 - 345
  • [47] Magnetic ordering in digital alloys of group-IV semiconductors with 3d-transition metals
    Otrokov, M. M.
    Tugushev, V. V.
    Ernst, A.
    Ostanin, S. A.
    Kuznetsov, V. M.
    Chulkov, E. V.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2011, 112 (04) : 625 - 636
  • [48] Magnetic ordering in digital alloys of group-IV semiconductors with 3d-transition metals
    M. M. Otrokov
    V. V. Tugushev
    A. Ernst
    S. A. Ostanin
    V. M. Kuznetsov
    E. V. Chulkov
    Journal of Experimental and Theoretical Physics, 2011, 112 : 625 - 636
  • [49] DIRECT-GAP GROUP-IV SEMICONDUCTORS BASED ON TIN
    GOODMAN, CHL
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (05): : 189 - 192
  • [50] DONOR GROUND STATES OF GROUP-IV AND GROUP-III-V SEMICONDUCTORS
    ALTARELL.M
    IADONISI, G
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1971, B 5 (01): : 21 - &
12345