A Novel High Voltage, Vertical MOSFET for High Power RE Applications

被引：0

作者：

Golio, Mike ^{[1
]}

Davies, Robert ^{[1
]}

Gogoi, Bishnu ^{[1
]}

Lutz, Dave ^{[1
]}

Battaglia, Brian ^{[1
]}

Neeley, Robert ^{[1
]}

Wright, Walt ^{[1
]}

Rice, Dave ^{[1
]}

Le, Phuong ^{[1
]}

Purchine, Mike ^{[1
]}

Elliot, Alex ^{[1
]}

Tran, Son ^{[1
]}

机构：

[1] HVVi Semicond Inc, Phoenix, AZ 85044 USA

来源：

2008 IEEE CSIC SYMPOSIUM | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a novel, high-voltage vertical FET (HVVFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Waft embodiment of the structure exhibit over 20 dB of gain with >45% efficiency from 1.2 to 1.4 GHz in a package that is approximately 1/4 the size of competing device technologies. A 300 Waft version of the device exhibits >15.5 dB of gain with > 46% efficiency from 1.03 to 1.09 GHz.

引用

页码：64 / 67

页数：4

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