High Temperature RF Behavior of SOI MOSFET Transistors for Low Power Low Voltage Applications

被引：0

作者：

Emam, M. ^{[1
]}

Vanhoenacker-Janvier, D. ^{[1
]}

Raskin, J. -P. ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM Inst, Dept Elect Engn, B-1348 Louvain, Belgium

来源：

2010 IEEE INTERNATIONAL SOI CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new approach to optimize the RF performance at high temperatures for low power low voltage applications. It is shown that the correct choice of the bias point can result in an improvement of the RF behavior of SOI transistors with increasing the temperature, which is opposite to the traditional degradation of RF behavior with increasing temperature. This approach is confirmed by RF measurements for both floating-body and body-tied SOI MOSFET transistors.

引用

页数：2

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