A novel high voltage RF vertical MOSFET for high power applications

被引：2
|
作者：
Wilson, PH [1 ]
机构：
[1] Fairchild Semicond, Discrete Power Technol Grp, San Jose, CA 95134 USA
来源：
EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2002年
关键词：
D O I：
10.1109/EDMO.2002.1174937
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper an RF Vertical MOSFET (VDMOS) will be discussed. The results will display a new vertical RF transistor that achieves excellent RF performance for high power applications utilizing the high breakdown capability. The VDMOS device can achieve an operating voltage of 48V.
引用
收藏
页码：95 / 100
页数：6
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