Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

被引：7
|
作者：
Chaldyshev, VV [1 ]
Bert, NA [1 ]
Preobrazhenskii, VV [1 ]
Putyato, MA [1 ]
Semyagin, BR [1 ]
机构：
[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1997年 / 238卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
As clusters; low temperature; Ostwald ripening;
D O I：
10.1016/S0921-5093(97)00442-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two-dimensional (2D) sheets of As clusters were produced in the crystalline GaAs matrix using molecular-beam epitaxy (MBE) at low temperature, indium delta-doping, and subsequent annealing. The sheets were inserted into a 3D array of arsenic clusters. Ostwald ripening in 2D and 3D cluster systems was studied using cross-sectional transmission electron microscopy. The cluster growth rate was found to be lower in the 2D system, than in the 3D one. The thickness of the 2D sheets increased with cluster coarsening and was evaluated as double average cluster diameter. The limitations were found for design of structures with built-in 2D sheets of As clusters separated by cluster-free GaAs matrix. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：148 / 151
页数：4
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