Vertical cavity lasers on p-doped substrates

被引：17

作者：

Lear, KL ^{[1
]}

Hou, HQ ^{[1
]}

Banas, JJ ^{[1
]}

Hammons, BE ^{[1
]}

Furioli, J ^{[1
]}

Osinski, M ^{[1
]}

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 09期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers; RESISTANCE;

D O I：

10.1049/el:19970492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n-type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.

引用

页码：783 / 784

页数：2

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