Vertical cavity lasers on p-doped substrates

被引：17
|
作者：
Lear, KL [1 ]
Hou, HQ [1 ]
Banas, JJ [1 ]
Hammons, BE [1 ]
Furioli, J [1 ]
Osinski, M [1 ]
机构：
[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 09期
关键词：
vertical cavity surface emitting lasers; semiconductor junction lasers; RESISTANCE;
D O I：
10.1049/el:19970492
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n-type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.
引用
收藏
页码：783 / 784
页数：2
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