Tunable photodetector based on GaAs/InP wafer bonding

被引：11
|
作者：
Wang, Wenjuan [1 ]
Ren, Xiaomin [1 ]
Huang, Hui [1 ]
Wang, Xingyan [1 ]
Cui, Hailin [1 ]
Miao, Ang [1 ]
Li, Yiqun [1 ]
Huang, Yongqing [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, Key Lab Opt Commun & Lightwave Technol Minist Edu, Beijing 100876, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期
基金：
中国国家自然科学基金;
关键词：
photodetector; tunable; wafer bonding;
D O I：
10.1109/LED.2006.883053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a tunable long wavelength vertical-cavity photodetector which is fabricated by bonding a-GaAs-based tunable filter with an InP-based absorption structure. The wavelength tuning range of 10.5 nm was achieved via thermal-optic effect. The external quantum efficiency of about 22%, the spectral linewidth as narrow as 0.6 nm, and the 3-dB bandwidth of 12 GHz were obtained in the device.
引用
收藏
页码：827 / 829
页数：3
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