Tunable photodetector based on GaAs/InP wafer bonding

被引：11

作者：

Wang, Wenjuan ^{[1
]}

Ren, Xiaomin ^{[1
]}

Huang, Hui ^{[1
]}

Wang, Xingyan ^{[1
]}

Cui, Hailin ^{[1
]}

Miao, Ang ^{[1
]}

Li, Yiqun ^{[1
]}

Huang, Yongqing ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Key Lab Opt Commun & Lightwave Technol Minist Edu, Beijing 100876, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

基金：

中国国家自然科学基金;

关键词：

photodetector; tunable; wafer bonding;

D O I：

10.1109/LED.2006.883053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a tunable long wavelength vertical-cavity photodetector which is fabricated by bonding a-GaAs-based tunable filter with an InP-based absorption structure. The wavelength tuning range of 10.5 nm was achieved via thermal-optic effect. The external quantum efficiency of about 22%, the spectral linewidth as narrow as 0.6 nm, and the 3-dB bandwidth of 12 GHz were obtained in the device.

引用

页码：827 / 829

页数：3

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