Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces

被引：5
|
作者：
Cheng, Bo-Siao [1 ]
Lee, Chia-En
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
LEDS;
D O I：
10.1143/JJAP.48.04C115
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and bottom naturally textured p-GaN layer. Light extraction efficiency was enhanced by such triple textured layers. The light output power of FC-LEDs was increased 60% (at 350 mA current injection) compared to that of conventional FC-LEDs by implementing the triple roughened surfaces. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 50 条
  • [31] High-power flip-chip blue light-emitting diodes based on AlGaInN
    Zakheim, DA
    Smirnova, IP
    Roznanskii, IV
    Gurevich, SA
    Kulagina, MM
    Arakcheeva, EM
    Onushkin, GA
    Zakheim, AL
    Vasil'eva, ED
    Itkinson, GV
    SEMICONDUCTORS, 2005, 39 (07) : 851 - 855
  • [32] High-power flip-chip blue light-emitting diodes based on AlGaInN
    D. A. Zakheim
    I. P. Smirnova
    I. V. Roznanskii
    S. A. Gurevich
    M. M. Kulagina
    E. M. Arakcheeva
    G. A. Onushkin
    A. L. Zakheim
    E. D. Vasil’eva
    G. V. Itkinson
    Semiconductors, 2005, 39 : 851 - 855
  • [33] Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes
    Kwak, Joon Seop
    Song, J. -O.
    Seong, T. -Y.
    Kim, B. I.
    Cho, J.
    Sone, C.
    Park, Y.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2006, 6 (11) : 3547 - 3550
  • [34] Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode
    Xu, Jin
    Zhang, Wei
    Peng, Meng
    Dai, Jiangnan
    Chen, Changqing
    OPTICS LETTERS, 2018, 43 (11) : 2684 - 2687
  • [35] Improved Light Output Power of GaN-Based Flip-Chip Light-Emitting Diode Through SiO2 Cones
    Jung, Se-Yeon
    Seong, Tae-Yeon
    ELECTRONIC MATERIALS LETTERS, 2012, 8 (06) : 549 - 552
  • [36] Improved light output power of GaN-based flip-chip light-emitting diode through SiO2 cones
    Se-Yeon Jung
    Tae-Yeon Seong
    Electronic Materials Letters, 2012, 8 : 549 - 552
  • [37] Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect
    Ryu, Han-Youl
    OPTICS EXPRESS, 2015, 23 (19): : A1157 - A1166
  • [38] High-stability reflective bonding pads for GaN-based flip-chip light-emitting diodes packaged by reflow soldering
    Xu, Linlin
    Xu, Jin
    Zhang, Wei
    Liang, Renli
    Hu, Jiahui
    Long, Hanling
    Dai, Jiangnan
    Chen, Changqing
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (26)
  • [39] Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes
    Che, Zhen
    Zhang, Jun
    Yu, Xinyu
    Xie, Mengyuan
    Yu, Jianhui
    Lu, Huihui
    Luo, Yunhan
    Guan, Heyuan
    Chen, Zhe
    OPTICAL ENGINEERING, 2015, 54 (11)
  • [40] Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide
    Lai, Fang-I.
    Ling, S. C.
    Hsieh, C. E.
    Hsueh, T. H.
    Kuo, Hao-Chung
    Lu, Tien-Chang
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) : 496 - 498
12345