Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces

被引：5
|
作者：
Cheng, Bo-Siao [1 ]
Lee, Chia-En
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
LEDS;
D O I：
10.1143/JJAP.48.04C115
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and bottom naturally textured p-GaN layer. Light extraction efficiency was enhanced by such triple textured layers. The light output power of FC-LEDs was increased 60% (at 350 mA current injection) compared to that of conventional FC-LEDs by implementing the triple roughened surfaces. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment. (C) 2009 The Japan Society of Applied Physics
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页数：3
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