Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

In his study the morphology and composition of InxGa1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of similar to100A/cm(2) cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.