A GaN-AlGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

被引：7
|
作者：
Yang Bin [1 ]
Guo Zhi-You [1 ]
Xie Nan [1 ]
Zhang Pan-Jun [1 ]
Li Jing [1 ]
Li Fang-Zheng [1 ]
Lin Hong [1 ]
Zheng Huan [1 ]
Cai Jin-Xin [1 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 04期
关键词：
GaN-based light-emitting diode; efficiency droop; multilayer barrier; last quantum barrier; EFFICIENCY;
D O I：
10.1088/1674-1056/23/4/048502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.
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页数：4
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