Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

被引：0
|
作者：
O'Neill, JP [1 ]
Ross, IM [1 ]
Cullis, AG [1 ]
Wang, T [1 ]
Parbrook, PJ [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 | 2003年 / 180期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In his study the morphology and composition of InxGa1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of similar to100A/cm(2) cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.
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页码：297 / 300
页数：4
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