Mechanical stability of Cu/low-k BEOL Interconnects

被引：0

作者：

Gonzalez, Mario ^{[1
]}

Vanstreels, Kris ^{[1
]}

Cherman, Vladimir ^{[1
]}

Croes, Kristof ^{[1
]}

Kljucar, Luka ^{[1
]}

De Wolf, Ingrid ^{[1
]}

Tokei, Zsolt ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

Back-end-of-line; BABSI; stress sensor; Finite Element Modeling; VCCT; CHALLENGES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different approaches combining Finite Element Simulations and in-situ electrical measurement of stress sensors during a BABSI test are proven to be ideal combination to quantitatively compare the strength of BEOL layers. It is shown that detectable mechanical failures during a shear or BABSI test are insufficient to detect early opens of the metal interconnections. A good agreement was found between the applied loads to the BEOL stack, the response of stress sensors below the Cu pillar and finite element simulations. Next, the risk of cohesive and adhesive failures in the Cu/low-k layers is evaluated in function of stiffness of low-k and design of metal interconnections.

引用

页数：6

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