Mechanical stability of Cu/low-k BEOL Interconnects

被引：0
|
作者：
Gonzalez, Mario [1 ]
Vanstreels, Kris [1 ]
Cherman, Vladimir [1 ]
Croes, Kristof [1 ]
Kljucar, Luka [1 ]
De Wolf, Ingrid [1 ]
Tokei, Zsolt [1 ]
机构：
[1] IMEC, B-3001 Leuven, Belgium
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
Back-end-of-line; BABSI; stress sensor; Finite Element Modeling; VCCT; CHALLENGES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different approaches combining Finite Element Simulations and in-situ electrical measurement of stress sensors during a BABSI test are proven to be ideal combination to quantitatively compare the strength of BEOL layers. It is shown that detectable mechanical failures during a shear or BABSI test are insufficient to detect early opens of the metal interconnections. A good agreement was found between the applied loads to the BEOL stack, the response of stress sensors below the Cu pillar and finite element simulations. Next, the risk of cohesive and adhesive failures in the Cu/low-k layers is evaluated in function of stiffness of low-k and design of metal interconnections.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] Effects of fluoride residue on Cu agglomeration in Cu/low-k interconnects
    Kobayashi, Y.
    Ozaki, S.
    Iba, Y.
    Nakata, Y.
    Nakamura, T.
    MICROELECTRONIC ENGINEERING, 2011, 88 (05) : 620 - 622
  • [22] A 45 nm CMOS node Cu/Low-k/ultra low-k PECVD SiCOH (k=2.4) BEOL technology
    Sankaran, S.
    Arai, S.
    Augur, R.
    Beck, M.
    Biery, G.
    Bolom, T.
    Bonilla, G.
    Bravo, O.
    Chanda, K.
    Chae, M.
    Chen, F.
    Clevenger, L.
    Cohen, S.
    Cowley, A.
    Davis, P.
    Demarest, J.
    Doyle, J.
    Dimitrakopoulos, C.
    Economikos, L.
    Edelstein, D.
    Farooq, M.
    Filippi, R.
    Fitzsimmons, J.
    Fuller, N.
    Gates, S. M.
    Greco, S. E.
    Grill, A.
    Grunow, S.
    Hannon, R.
    Ida, K.
    Jung, D.
    Kaltalioglu, E.
    Kelling, M.
    Ko, T.
    Kumar, K.
    Labelle, C.
    Landis, H.
    Lane, M. W.
    Landers, W.
    Lee, M.
    Li, W.
    Liniger, E.
    Liu, X.
    Lloyd, J. R.
    Liu, W.
    Lustig, N.
    Malone, K.
    Marokkey, S.
    Matusiewicz, G.
    McLaughlin, P. S.
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 89 - +
  • [23] Integration of a low-k α-SiOC:H dielectric with Cu interconnects
    Ahn, JH
    Lee, KT
    Oh, BJ
    Lee, YJ
    Liu, SH
    Jung, MK
    Kim, YW
    Suh, KP
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (04) : 422 - 426
  • [24] Degradation of Electromigration Lifetime of Cu/Low-k Interconnects by Postannealing
    Kakuhara, Yumi
    Ueno, Kazuyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [25] CVD-Mn/CVD-Ru-based Barrier/Liner Solution for Advanced BEOL Cu/Low-k Interconnects
    Jourdan, N.
    van der Veen, M. H.
    Gonzalez, V. Vega
    Croes, K.
    Lesniewska, A.
    Pedreira, O. Varela
    Van Elshocht, S.
    Bommels, J.
    Tokei, Zs.
    2016 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC), 2016, : 37 - 39
  • [26] Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability
    Mutch, Michael J.
    Pomorski, Thomas
    Bittel, Brad C.
    Cochrane, Corey J.
    Lenahan, Patrick M.
    Liu, Xin
    Nemanich, Robert J.
    Brockman, Justin
    French, Marc
    Kuhn, Markus
    French, Benjamin
    King, Sean W.
    MICROELECTRONICS RELIABILITY, 2016, 63 : 201 - 213
  • [27] Blech effect and lifetime projection for Cu/Low-K interconnects
    Christiansen, Cathryn
    Li, Baozhen
    Gill, Jason
    PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2008, : 114 - 116
  • [28] Blech effect in Cu interconnects with oxide and low-k dielectrics
    Hou, Yuejin
    Tan, Cher Ming
    IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2007, : 65 - +
  • [29] Suppression of stress induced failures in Cu/low-k interconnects
    Sun, SS
    Kwak, BL
    Burke, P
    Hall, GDR
    Bhatt, H
    Allman, D
    ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005), 2006, : 719 - 725
  • [30] Chemical mechanical polishing and wet cleaning technologies of ruthenium for porous low-k/Cu interconnects
    Shiohara, M.
    Maruyama, K.
    Abe, M.
    Imai, M.
    Namba, K.
    Tarumi, N.
    Hara, Y.
    Matsumura, K.
    Brusic, V.
    Thompson, C.
    Feeney, P.
    Dirksen, J.
    Nicholson, K.
    Kondo, S.
    Ogawa, S.
    Saito, S.
    ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), 2008, 23 : 143 - 149
12345