Defect studies in epitaxial SiC-6H layers on insulator (SiCOI)

被引：0
|
作者：
Hugonnard-Bruyère, E [1 ]
Cantin, JL
von Bardeleben, HJ
Letertre, F
DiCioccio, L
Ouisse, T
机构：
[1] Univ Paris 06, Phys Solides Grp, F-75251 Paris, France
[2] Univ Paris 07, CNRS, UMR 75 88, F-75251 Paris, France
[3] CEA, LETI, Dept Microtechnol, F-38054 Grenoble, France
[4] ENSERG, LPCS, CNRS, UMR 5531, F-38016 Grenoble, France
[5] INSA, LPM, CNRS, UMR 5511, F-69121 Villeurbanne, France
[6] SOITEC SA, F-38190 Bernin, France
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00388-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nitrogen doped N-type 6H-SiCOI structures have been obtained by the Smart Cut(R) technique. The process induced defects and their electrical activity have been analysed by electron paramagnetic resonance (EPR) spectroscopy, photoluminescence and Hall measurements. The influence of thermal annealing at temperatures between 800 and 1300 degrees C has been studied. The 1300 degrees C annealing step is required to recover the N-type conductivity, even though compensating defects at concentrations of 1x10(18)cm(-3) are still present.
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页码：277 / 280
页数：4
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