Low-voltage optical phase modulation by electric-field-induced phase transition of KTN bulk crystal

被引：0

作者：

Inagaki, Takahiro ^{[1
]}

Imai, Tadayuki ^{[2
]}

Miyazu, Jun ^{[2
]}

Takesue, Hiroki ^{[1
]}

Kobayashi, Junya ^{[2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

2014 IEEE PHOTONICS CONFERENCE (IPC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a low-voltage optical phase modulation that employs the electric-field induced paraelectric-ferroelectric phase transition of KTN crystal. A large refractive-index change occurs within a narrow applied-voltage range as a result of structural changes in the crystal. We reduced the half-wave voltage to 2.1 Vp-p, which is very small for a 1-mm-thick bulk crystal.

引用

页码：390 / 391

页数：2

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